Papers – Page 18 – TechConnect Briefs

Modeling of the Self-Limiting Oxidation for Nanofabrication of Si

Chen Y., University of California, US

The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to [...]

Systematic Global Calibration of a Process Simulator

Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Kong J-T., Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Baek D-H., Samsung Electronics Co.Ltd., KR

This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole [...]

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Ciampolini L., Ciappa M., Malberti P., Fichtner W., Swiss Federal Institute of Technology, CH

Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant [...]

Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method

Ban Y., Yoon S., Kwon O., Won T., Inha University, KR

In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show [...]

Robust Ion-Implantation Process Design through Statistical Analysis

Sudhama C., Thoma R., Morris M., Christiansen J., Lim I-S., Motorola Digital DNA Labs, US

In this work, for the first time, we present a TCAD methodology to rigorously account for statistical variations due to these random process errors (inherent in all semiconductor processes), and thereby design a robust ion-implantation [...]

Systematic Design and Optimization of Multi-Material, Multi-Degree-of-Freedom Micro Actuators

Sigmund O., Technical University of Denmark, DK

The paper reports an automated method for the synthesis of multi-material, multi-degree-of-freedom micro actuators. The method is based on topology optimization, an iterative computational scheme consisting of alternating finite element analyses, sensitivity analyses and optimal [...]

Full-chip Process Simulation for Silicon DRC

Sahouria E., Granik Y., Cobb N., Toublan O., Mentor Graphics Corporation, US

We have developed fast IC process simulation technique based on an empirical resist and etch models to compute the silicon image of designs as large as a full ULSI chip. The simulated silicon image is [...]

Process Simulation for Contact Print Microlithography

Darhuber A.A., Miller S.M., Troian S.M., Wagner S., Princeton University, US

Using a combination of experiment and simulations, we have studied the conformation of liquid microstructures on both at and corrugated, chemically heterogeneous substrates. The artificial surface patterns, which define regions of different surface energy, induce [...]

Creation of 3D Surface Models from 2D Layouts for BEM Anaylysis

Spasojevic M., Ljung P., Bächtold M., Coyote Systems, Inc., US

In this paper we present a new approach to creation of 3D surface models of MEMS devices from 2D layout masks suitable for analysis using the Boundary Element Method (BEM) [1]. The algorithm is implemented [...]

Automated Mask-Layout and Process Synthesis for MEMS

Ma L., Antonsson E.K., California Institute of Technology, US

This paper presents a method for automated mask-layout and process synthesis for MEMS. The synthesis problem is approached by use of a genetic algorithm. For a given desired device shape, and several fabrication process choices, [...]