In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show very good agreement with SIMS and RBS data, respectively. The Ion Distribution Replica Method has been implemented into the model to get a computational efficient in a 3D simulation, and we have calculated the 3D Monte-Carlo simulation into the topographically complex structure.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 44 - 47
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems