Papers – Page 17 – TechConnect Briefs

Simulation of Porous Si and SiOx Layer Growth

Burlakov V.M., Sutton A.P., Briggs G.A.D., Tsukahara Y., University of Oxford, UK

Monte Carlo simulation of deposition of amorphous SiOx layer on a polymer surface is reported. The model developed is based on the network properties of silica and takes into account dangling bonds arising during the [...]

Ab initio Molecular Dynamics Simulations of Aluminum Ion Solvation in Water Clusters

Lubin M.I., Bylaska E.J., Weare J.H., University of California, US

The results of ab initio molecular dynamics simulations of the solvation of Al3+ and its hdrolyzation products in water clusters are reported. Al3+ ions in water clusters (6<n<16) form a stable hexa-hydrate Al(H20)3+6 complex in [...]

Computer Simulation from Electron Beam Lithography to Optical Lithography

Cui Z., Rutherford Appleton Laboratory, UK

Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal [...]

Self-Adapting Vertices for Mask-Layout Synthesis

Lee C.-Y., Antonsson E.K., California Institute of Technology, US

An efficient procedure for synthesizing MEMS mask-layouts for a desired 3-D shape is discussed. This method can greatly reduce the number of design and prototype iterations required to produce a desired device. The method is [...]

Modeling of Focused Ion Beam Trimming of Cantilever Beams

Lam T., Darling R.B., Univeristy of Washington, US

A finite element model of the cantilever beam is implemented to include a non-uniform thickness along its length, due to focused ion beam trimming. A quasi-static, iterative approach is used to calculate the cantilever profile [...]

Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options

Lynch W.T., Independent Consultant, US

For the first time a comprehensive methodology has been applied to the pre-physical design of hierarchical interconnect wiring with consideration of the limitations of both the device and the wiring technologies (Fig. 1). The overall [...]

Modeling the Microstructure and Elastic Properties of Complex Materials

Roberts A.P., Garboczi E.J., University of Queensland, AU

The finite element method is used to study the influence of porosity and pore shape on the elastic properties of model porous media. The Young's modulus of each model was found to be practically independent [...]

Strength of Nanoscale Copper Connection Under Shear

Heino P., Tampere University of Technology, FI

Strength and shear modulus of several polycrystalline copper systems were calculated with the molecular dynamics method and effective-medium potential. Grain size varied between 2{10nm and systems were sheared beyond the yield point at room temperature. [...]

Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring

Horn A., Schröder H., Obermeier E., Wachutka G., Münich University of Technology, DE

We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a “peeling” process of terraced planes, leading to the concept of a “step flow model of [...]

On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

Hoffmann T., Dombrowski K.F., Senez V., IEMN-ISEN, UMR CNRS, FR

Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is [...]