Modeling of Focused Ion Beam Trimming of Cantilever Beams


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A finite element model of the cantilever beam is implemented to include a non-uniform thickness along its length, due to focused ion beam trimming. A quasi-static, iterative approach is used to calculate the cantilever profile for a given bias voltage. Two focused ion beam trimming strategies are compared. The snap-down voltage as a function of milling depth or width is calculated.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 79 - 82
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0