Printed & Flexible Electronics – Page 4

Effect of Porosity on Specific Resistance of Inkjet-Printed Silver Nanoparticles during Laser Sintering

Moon S.J., Moon Y.J., Kang H., Kang K., Kang H., Kang K., Lee S-H., Hwang J.Y., Moon S.J., Moon Y.J., Korea Institue of Industrial Technology, KR

In nano-metal sintering, the electrical resistivity of nano-metals is related to their structure. Electrical resistivity is affected by grain size and density. Larger grains and denser films yield lower electrical resistivity. This work investigated the [...]

Production technologies for large area flexible electronics

Kolbusch T., Crone K., Coatema Coating Machinery GmbH, DE

There is a wide variety of printed large area flexible electronic devices and at the same time a number of different visions and estimates for this new emerging industry and market. But as every new [...]

Enhanced performance of all organic field-effect transistors and capacitors through choice of solvent

Guha S., Knotts G., Ukah N.B., University of Missouri, US

We demonstrate low-operating voltage, high mobility, and stable organic field-effect transistors (OFETs) using both non-polar and polar polymeric dielectrics such as poly(4-vinyl phenol) (PVP), poly methyl metacrylate (PMMA), and polyvinylidene fluoride-trifluoroethylene (PVDF-TrFe), dissolved in solvents [...]

Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique

Taghinejad H., Taghinejad M., Ganji M., Rostamian A., Taghinejad H., Taghinejad M., Abdolahd M., Mohajerzadeh S., Tghinejad H., University of Tehran, IR

we take advantages of direct integration of Ni2Si/Si nanograss heterojunction array on a MOSFET's gate terminal, utilizing a CMOS compatible top-down technique, to realize a highly sensitive phototransistor. In the proposed technique, using a deep [...]

Temperature Stability of PAG-Doped-Graphene, Towards Commercial Production of Graphene Integrated Circuits

Al-Mumen H., Li W., Michigan State University, US

In our previous work we found out a highly in air stable technique, defect-less, and relatively high electron mobility for n-doping graphene nanomesh using PAG (an element of SU-8 resist compound). This work demonstrated the [...]

Unipolar resistive switching and current flow mechanism in thin film SnO2

Talukdar A., Almeida S., Mireles J., MacDonald E., Pierluissi J.H., Garcia E., Zubia D., University of Texas at El Paso, US

Non-volatile memories play a very important role in modern day electronics. In harsh environments such as space and weapons systems, radiation-hardness is an essential requirement. Radiation-hardening-by-design is an effective solution which is based on redundancy [...]

tunneling rate in chaotic quantum system

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We study electron spectra and electron tunneling in double quantum systems: quantum wells (QWs), quantum dots (QDs) and quantum rings (QRs). We especially study the relation between their chaotic properties and tunneling. In particular we [...]

Information-Theoretic Estimates of Classical and Quantum Communication and Processing at Nanoscale

Lyshevski S.E., Reznik L., Rochester Institute of Technology, US

Nanotechnology resulted in new communication and processing paradigms. While conventional communication, computing and processing are supported by nanoscaled digital systems, quantum-centric computing, communication and processing are emerged. This paper reports fundamental, applied and experimental multidisciplinary [...]

Semiconducting Bilayer Graphene for Device Applications

Chu T., Zhao Y., Chen Z., Purdue University, US

Owing to its unique electronic, thermal, and mechanical properties, graphene has sparked enormous scientific interest since its discovery in 2004. However, the absence of a bandgap limits its applications in electronic and optoelectronic fields. Theoretical [...]

Record resistivity for in-situ grown horizontal carbon nanotubes interconnects

Dijon J., Ramos R., Fournier A., Fournier H., Le Poche H., Fournier A., Fournier H., Okuno H., Simonato J-P, CEA-Liten, FR

Carbon in the form of nanotubes (CNTs) and graphene is the only known material that can replace copper in integrated circuits to carry the high current densities associated with advanced interconnects. Its implementation is however [...]