Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique
Taghinejad H., Taghinejad M., Ganji M., Rostamian A., Taghinejad H., Taghinejad M., Abdolahd M., Mohajerzadeh S., Tghinejad H., University of Tehran, IR
we take advantages of direct integration of Ni2Si/Si nanograss heterojunction array on a MOSFET's gate terminal, utilizing a CMOS compatible top-down technique, to realize a highly sensitive phototransistor. In the proposed technique, using a deep [...]