Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique

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we take advantages of direct integration of Ni2Si/Si nanograss heterojunction array on a MOSFET’s gate terminal, utilizing a CMOS compatible top-down technique, to realize a highly sensitive phototransistor. In the proposed technique, using a deep reactive ion etching (D-RIE) process thick poly-silicon (Si) of gate area is converted to array of Si-nanograsses through sequential etching/passivation cycles. Afterward, about ~15 nm thin layer of nickel (Ni) was deposited on the surface of Si-nanograsses using an electron beam evaporator. Due to thermal annealing of sample at 750 oC in argon construction of the prospective heterojunction is feasible. many structural analyses were conducted to identify Ni-Si Phases present. as well as to investigate uniformity of formed nanostructures all through the array. This technique provides a facile way to accurately control nanostructures’ density, height and thickness that would be appealing for technological needs for tuning electrical, optical and mechanical properties of devices based on silicon nanostructures.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2014: Electronics, Manufacturing, Environment, Energy & Water
Published: June 15, 2014
Pages: 41 - 44
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Printed & Flexible Electronics
ISBN: 978-1-4822-5830-1