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HomeTopicsModeling & Simulation of Microsystems

Topic: Modeling & Simulation of Microsystems

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR
For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Electronic Structure of Quantum Dots

Hines C., McCarthy S.A., Wang J.B., Abbott P.C., The University of Western Australia, AU
This paper presents a detailed calculation of the electronic structure of quantum dots with various geometries. In particular, non-circular quantum dots are examined and their characteristic properties analysed. In addition, the importance of electron-electron spin [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US
Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK
As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US
A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US
In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US
Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT
The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Quantum Effects, Quantum Devices and Spintronics

Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation

Rábag F., Mandelis A., Salnik A., University of Toronto, CA
B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]

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