Modeling & Simulation of Microsystems – Page 18

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Mohseni K., Shakouri A., University of Colorado, US

The hydrodynamic model of electron transport is revisited. By rearranging the governing equations a new set of equations in terms of the electron vorticity and internal energy is derived. The advantage of the new set [...]

Principles of Electron Wave Computing using Quantum Resistor Networks

Wu C.H., University of Missouri-Rolla, US

Quantum resistor networks are interconnected thin wires or electron conducting wave guides. A multiple input-output quantum network is capable of performing massive parallel computing, similar to optical computing. Basic logic functions and arithmetic computation have [...]

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

Melnik R.V.N., Willatzen M., University of Southern Denmark, DK

The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Electronic Structure of Quantum Dots

Hines C., McCarthy S.A., Wang J.B., Abbott P.C., The University of Western Australia, AU

This paper presents a detailed calculation of the electronic structure of quantum dots with various geometries. In particular, non-circular quantum dots are examined and their characteristic properties analysed. In addition, the importance of electron-electron spin [...]

Topic: Modeling & Simulation of Microsystems

Quantum Effects in SOI Devices

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Principles of Electron Wave Computing using Quantum Resistor Networks

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Electronic Structure of Quantum Dots

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

The Use of Quantum Potentials for Confinement in Semiconductor Devices

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Self-consistent Modeling of Open Quantum Devices