In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport is ballistic. Modeling such structures using a finite difference approach, we describe how the conductance can be calculated using a numerically stabilized variant of the transfer matrix approach derived from the 2D Schrödinger equation. Examining the example of a quantum point contact, we also describe how this method can be efficiently coupled to a Poisson solver to allow self-consistency to be achieved.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 185 - 188
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems