The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown on GaAs(100) oriented substrates leads to self-assembly of quantum dots with wetting layers as is known experimentally. It is shown that the quantum-dot ground state of the combined structure is considerably affected by the presence of the wetting layer, and similarly, wetting-layer states are affected by the presence of the quantum dot. This quantum dot/wetting layer state interference is expected t have an impact on carrier-capture phenomena and operation speeds of electronic and optical devices using quantum dots as active regions.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 209 - 212
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems