The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs


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A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 189 - 192
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-6-3