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HomeTopicsMEMS & NEMS Devices, Modeling & Applications

Topic: MEMS & NEMS Devices, Modeling & Applications

Fabrication of Silicon Nanowires Using Atomic Layer Deposition

Gopireddy D., Takoudis C.G., Gamota D., Zhang J., Brazis P.W., University of Illinois at Chicago, US
We will present the synthesis of silicon nanowires using Atomic Layer Deposition (ALD) technique. ALD allows the growth of nanowires in a controlled fashion using the nanoparticles as the seed. The diameter and the length [...]

Absolute Pressure Measurement using 3D-MEMS Technology

Russell R., Meriheinä U., VTI Technologies, US
The use of 3D-MEMS processes has created yet another new breakthrough. Extremely small silicon capacitive absolute pressure sensors can now be realized by utilizing the same MEMS technology that has been in production for many [...]

A Novel Method of Fabricating Optical Gratings Using the One Step DRIE Process on SOI Wafers

Cooper A.W., Docker P.T., Ward M.C., The University of Birmingham, UK
This paper describes a novel technique for manufacturing optical gratings by using the one step DRIE (Deep Reactive Ion Etching) process. Using the notching effect documented in previous work when working with silicon on insulator [...]

Microfabricated Silicon Apertures for Ion Channel Measurement

Wilk S.J., Goryll M., Petrossian L., Laws G.M., Goodnick S.M., Thornton T.J., Saraniti M., Tang J.M., Eisenberg R.S., Arizona State University, US
Ion channels are proteins that act as pores in cell membranes and allow only specific ions to pass through the cell wall. Here, we present a method for microfabrication of apertures in a silicon substrate [...]

Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication

Morikawa Y., Hayashi T., Suu K., Ishikawa M., ULVAC, Inc., JP
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.

Fabrication of Well-aligned and Mono-modal Germanium Dots on the Silicon Substrate with Trench-ridge Nano-structures

Chen P.S., Chen Y.J., Peng Y.H., Chen P.S., Chen Y.J., Kuan C.H., National Taiwan University, TW
Here we report the ability to fabricate well-aligned and mono-modal Ge dots on the silicon substrate with nano-trenches. It is started with electron beam lithography system (E-beam) to make patterns. Then reactive ion etching (RIE) [...]

Direct Wafer Polishing with 5 nm Diamond

Sung J.C-M, Tai M-F, Kinik Company, TW
CMP for making future semiconductor chips with nanom (nano meter) feature sizes can be accomplished by using nanom diamond particles embedded in an organic matrix (e.g. epoxy). Such nanom diamond particles are derived from the [...]

A Unified Compact Model for Electrostatic Discharge Protection Device Simulation

Chou H-M, Cho Y-Y, Chou H-M, Lee J.W., Li Y., National Chiao Tung University, TW
In modern microelectronics manufacturing, whole chip electrostatic discharge (ESD) protection circuit design is necessary for obtaining robust electrical performance [1-5]. In designing the whole chip ESD protection circuit, owing to its high circuit complexity, an [...]

Diode Laser Welding of Planar Microfluidic Devices, BioMEMS, Diagnostic Chips & Microarrays

Chen J-W, Zybko J., Clements J.T., NanoSciences, Inc., US
As polymer-based microfluidic devices, lab-chips and diagnostic platforms are pushed towards increasingly smaller geometries, advances in diode laser technology now allow for cleaner and more precise assembly. Coupling the use of photolithographic methods and mask-sets [...]

Development of Self-Assembled Robust Microvalves with Electroform Fabricated Nano-Structured Nickel

Li B., Chen Q., University of Central Florida, US
The microvalve for the hydraulic actuatora need large flow rate (>10 cc/second, displacement related), high-pressure support ability (>10 MPa) and a high operational frequency (>10 kHz) [1, 2]. Microvalves can match the piezoelectric material’s frequency, [...]

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