Informatics, Modeling & Simulation – Page 82

A Method of MOSFET Dopant Profile Prediction and its Use in Transistor Design

Davis J., Kulkarni M., Pollack G., Saxena S., Vasanath K., Texas Instruments, Inc., US

As MOS transistor size shrinks to sub-quartermicron dimensions, accurate knowledge of the dopant concentration in various regions of the transistor is becoming more and more important for device simulations. We have developed a methodology to [...]

A Semi-Empirical Resist Dissolution Model for Sub-micron Lithographies

Bollepalli S.B., Cerrina F., Khan M., UW-Madison, US

In this paper, we present a new resist dissolution model suitable for large range of application domains - from memory devices employing < 130nm design rules to MEMS devices with design rules exceeding 10s of [...]

Computer Aided Mask-Layout for Bulk Etch Fabrication

Antonsson E.K., Burdick J.W., Long M.K, California Institute of Technology, US

This paper presents a method to synthesize the mask layout geometry for a MEMS wet etching process. Given a desired part geometry, the method determines a candidate mask geometry that will etch to the final [...]

Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations

Hanson D.E., Kress J.D., Valone S.M., Los Alamos National Laboratory, US

Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile [...]

Topic: Informatics, Modeling & Simulation

A Method of MOSFET Dopant Profile Prediction and its Use in Transistor Design

A Semi-Empirical Resist Dissolution Model for Sub-micron Lithographies

Computer Aided Mask-Layout for Bulk Etch Fabrication

Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations

Bulk and Topography Processing