Modeling of Strain in Boron-Doped Silicon Cantilevers


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A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as an isotropic eiastic material. A lattice mismatch paramerer due to the substitutional boron is used as the strain source. Quaiitative agreement is resulted with experiments in the iiterature for varying thickness cantilevers.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 94 - 99
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3