Compact Modeling – Page 34 – TechConnect Briefs

Antiphase Design for Balanced Oscillators

Liu X., Sheng Z., Law C.L., Qian C., Sun Z., Nanyang Technological University, SG

A novel general design method, which is based on S-parameters and suitable for MMIC and MEMS, has been developed for antiphase balanced oscillators in this paper. To demostrate the design method, a new type of [...]

A New Compact Model of Floating Gate Non-Volatile Memory Cells

Larcher L., Pavan P., Gattel F., Albani L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper presents a new compact model of Floating Gate Non-Volatile Memory Cells using SPICE circuit elements. It features many advantages compared to previous models: it is simple and easy to implement and to update, [...]

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Sudhama C., Joardar K., Whitfield J., Zlotnicka A., Motorola SPS, US

The exploration and modeling of high-frequency MOSFET phenomena are vitally important because MOSFETs are emerging as candidates for active devices in front-end RF circuits operating at more than 1GHz [1-2]. In this work we present [...]

Compact Modeling of Avalanche Breakdown in pn-Junctions for Computer-Aided ESD Design (CAD for ESD)

Subramanian Y., Darling R.B., University of Washington, US

This paper presents and validates compact, physically-based electrothermal models of the avalanche process in pn junctions for use in network simulators (e.g. Saber). Self-heating effects are also included. This enables the simulation of large systems [...]

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Zhou X., Lim K.Y., Nanyang Technological University, SG

A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s effective channel length (Leff) with critical-dimension correction to poly-gate length (Lg) and correlation to metallurgical channel length (Lmet). A self-consistent compact model for [...]

Using Pseudo Transient Continuation and the Finite Element Method to Solve the Nonlinear Poisson-Boltzmann Equation

Shestakov A.I., Milovich J.L., Noy A., Lawrence Livermore National Laboratory, US

The nonlinear Poisson-Boltzmann (PB) eequation is solved using Pseudo Transient Continuation. The PB solver is constructed by modifying the nonlinear diffusion modeule of a 3D, massively parallel, unstructured grid, finite element, radiation-hydrodynamics code. The solver [...]

Topic: Compact Modeling

Antiphase Design for Balanced Oscillators

A New Compact Model of Floating Gate Non-Volatile Memory Cells

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Compact Modeling of Avalanche Breakdown in pn-Junctions for Computer-Aided ESD Design (CAD for ESD)

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Using Pseudo Transient Continuation and the Finite Element Method to Solve the Nonlinear Poisson-Boltzmann Equation

Using Scalar Algebraic Multigrid Solvers for Efficient 3-D Stress Analysis of Microfabricated Structures

New Numerical Techniques and Tools in SUGAR for 3D MEMS Simulation

Compact Modeling and Model Order Reduction

Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices