Zhou X., Lim K.Y.
Nanyang Technological University, SG
Keywords: critical-current at linear-threshold, critical-dimension correction, effective channel length, LDD lateral diffusion, metallurgical channel length, MOSFET
A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s effective channel length (Leff) with critical-dimension correction to poly-gate length (Lg) and correlation to metallurgical channel length (Lmet). A self-consistent compact model for the lightly-doped drain (LDD) lateral diffusion is proposed, which can be correlated to the extracted Leff. The combined experimental determination of Leff, Lmet, and Lg further validates the proposed “critical-current at linear-threshold” (“Icrit@Vt0”) Leff-extraction method, and provides important applications in statistical process control and monitoring as well as deep-submicron (DSM) technology characterization and device modeling.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 44 - 47
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-0-4