Advanced Manufacturing – Page 51

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Nguyen C.D., Jungemann C., Meinerzhagen B., Technical University Braunschweig, DE

An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the [...]

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

Jungemann C., Grasser T., Meinerzhagen B., Technische Universität Braunschweig, DE

The shrinking of the device dimensions below 100nm is pushing the classical TCAD tools like the drift-diffusion (DD) or hydrodynamic (HD) models to their limits. While the impact of the shrinking on the accuracy of [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA

Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

Ashok A., Akis R., Vasileska D., Ferry D.K., Arizona State University, US

Spintronics is a new branch of electronics which involves the active control and manipulation of spin degrees of freedom in solid-state devices. Spin transport differs from charge transport as spin is a non-conserved quantity in [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes

Vasenkov A.V., Fedoseyev A.I., Kolobov V.I., Hong Ki-Ha, Choi H.S., Kim J., Kim K.H., Kim J., Kim K.H., Lee H.S., Shin J-K, CFD Research Corporation, US

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]

Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures

Hasanuzzaman M., Haddara Y.M., McMaster University, CA

Intermixing at heterointerfaces and the broadening of the SiGe layer in a Si/SiGe/Si single quantum well (SQW) structure can be detrimental to device performance. Thus it is important to develop predictive models for interdiffusion phenomena [...]

Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly

Gao D., Kaczynski A., Jaszczak J.A., Michigan Technological University, US

A good understanding of quantum dot (QD) self assembly not only has the potential to augment standard materials patterning technologies but also has applications in industrial nanostructure fabrications. Many observations and insights about self-assembled quantum [...]

Topic: Advanced Manufacturing