Sensors, MEMS, Electronics – Page 412

Adaptive Hierarchical Finite Element Modeling of Dopant Diffusion

Bose A., Rafferty C.S., Bell Laboratories, US

We present a finite element formulation based on a hóp refinement strategy for the coupled dopant-defect diffusion problem in semiconductor process modeling. The algorithm involves increasing the degree p of the element basis as well [...]

Modeling of Strain in Boron-Doped Silicon Cantilevers

Rueda H.A., Law M.E., University of Florida, US

A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as [...]

A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules

Tronel Y., Fichtner W., Swiss Federal Institute of Technology Zürich, CH

Insulated Gate Bipolar Transistors (IGBT's) are widely used in the automotive industry as high power current switches. They are currently being introduced into traction applications (locomotives, trams, metros, etc.) where high reliability is extremely important. [...]

Residual Stresses/Strains Analysis of MEMS

Hsu T-R., Sun N., San Jose State University, US

This paper describes the development of a finite element based MEMPACK code developed by the lead author and his graduate students. The MEMPACK code will be used for simulation and prediction of residual stresses and [...]

PSDesigner: A Framework for Transistor Co-Optimization

Burch R., Saxena S., Mozumder P.K., Vasanth K., Davis J., Rao S., Texas Instruments, Inc., US

One challenge for modern CMOS technology is the manufacture of dissimilar transistors on a sin~le chip at minimum cost. For example, hioh performance transistors for critical paths and low power transistors can be combined to [...]

A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation

Kaiblinger-Grujin G., Selberherr S., Vienna Technical University, AT

We present analytical electron mobility formulae for Si which treat the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte Carlo (MC) [...]

Modeling

Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization

Pyka W., Selberherr S., Technical UniversityVienna, AT

During sputter deposition of metal layers bulges at sharp convex corners can arise and are observed after metalization of contact holes for semiconductor circuits. We present an explanation of this phenomenon by assuming that in [...]

Numerical Simulation for the Sacrificial Release of MEMS Square Diaphragms

Li W.J., Liu J., Shih J.C., Mai J.D., Ho C-M., Liu J., Tai Y-C., UC-Los Angeles, US

Chemical etching of sacrifeial layers is a widely used technique in surface micromachining Etch rate prediction of the sacrif cial layer in an etchant is critical for optimizing a giving fabrication process. This paper presents [...]

Modeling Image Formation in Layered Structures: Application to X-ray Lithography

Bollepalli S.B., Khan M., Cerrina F., UW-Madison, US

In the fabrication of semiconductor devices using lithography, the modeling of the exposure process is very often needed. The elements of a typical exposure system from a modeling perspective comprise of a radiation source, a [...]