A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation


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We present analytical electron mobility formulae for Si which treat the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte Carlo (MC) calculations which are based on a new approach to ionized impurity scattering that inherently distinguishes the dopant species. By calculating the scattering cross section in the Born approximation including momentumdependent screening and pair-scattering we finally obtain the total impurity scattering rate which depends through the atomic and electron number on the dopant species. Using this impurity scattering model in our MC simulator we finally obtain the electron mobility as a function of temperature and concentration for P-, As-, Sb-, and B-doped Si. From these first principle data we derive analytical expressions for the majority and minority mobility valid in the temperature range (70-500 K) and up to an impurity concentration of 102i cm-3.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 70 - 75
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3