Sensors, MEMS, Electronics – Page 391

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y., Nanyang Technological University, SG

This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, [...]

Simulation of the Piezo-Tunnel Effect

Friedrich A.P., Besse P.A., Bächtold M., Popovic R.S., Swiss Federal Institute of Technology of Lausanne, CH

We present a new model of the piezo-tunnel effect in a heavily doped silicon p-n junction. Our approach is based on the coupling of a strain-dependent description of the energy exterma in the valence and [...]

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems

Stockinger M., Strasser R., Plasun R., Wild A., Selberherr S., TU Vienna, AT

We present a new closed-loop simulation-based optimization process for a 100 nm MOSFET for portable systems such as subscriber units for wireless communications, yielding an almost double drive performance at equivalent stand-by power when compared [...]

Sector: Sensors, MEMS, Electronics

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Simulation of the Piezo-Tunnel Effect

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems

Simulation of the Frequency Limits of SiGe HBTs

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices

A New Analytical Energy Relaxation Time Model for Device Simulation

Modelling an NMR Probe for Magnetometry

Semiconductor Device Modeling