Sector: Sensors, MEMS, Electronics
Physical Modeling of MEMS Cantilever Beams and the Measurement of Stiction Force
A finite element model is combined with experimental data to extract the stiction force in MEMS cantilever beams. The model predicts cantilever behaviors both before and after snap-down has occurred. Experimental measurements of cantilevers have [...]
Direct Write Technology as a Tool to Rapidly Prototype Patterns of Biological and Electronic Systems
Ringeisen B.R., Chrisey D.B., Piqué A., Krizman D., Brooks M., Spargo B., Naval Research Laboratory, US
The full potential of modeling and simulations is only realized when it is based on experimental results under varied conditions and systems. A single tool to rapidly prototype electronic and biological circuits would enhance the [...]
Mechanical Property Measurement of Thin-film Gold Using Thermally Actuated Bimetallic Cantilever Beams
We describe a method for estimating the Young's modulus of thin-film gold deposited on the poly2 layer in the MUMPS process is described. An optical detection system employing position sensitive detectors (PSD) is built to [...]
Parameter Extraction for Surface Micromachining Using Eelectrical Characterization of Sensors
Maute M., Kimmerle S., Franz J., Hauer J., Schubert D., Krauss H.-R., Kern D.P., Robert Bosch GmbH, DE
This paper presents a novel methodology for the extraction of process dependent geometrical parameters of surface micromachined sensors. This approach is based on the electrical measurement of static capacitance-voltage characteristics of the sensor element on [...]
3-D Computational Modeling of RF MEMS Switches
Young's modulus and residual stress state of freestanding thin membranes are characterized in this work by means of wafer level experimental techniques. RF MEMS Switches manufactured by Raytheon Systems Co. are investigated using a new [...]
Stress Measurement in MEMS Devices
Due to the unique structure and small scale of Micro-Electro-Mechanical Systems (MEMS), residual stresses during the deposition processes can have a profound affect on the functionality of the MEMS structures. Typically, material properties of thin [...]
Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell
Employing Green's function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) [...]
Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation
Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR
In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]