Sensors, MEMS, Electronics – Page 330

Engineering BSIM for the Nano-Technology Era and Beyond

Chan M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents the current status of the forth generation BSIM model and issues of modeling CMOS based devices with nanometer dimensions. Due to the divergence of device structures in sub-0.1 m gate length, it [...]

Overview of An Advanced Surface-Potential-Based MOSFET Model (SP)

Gildenblat G., Chen T.L., Pennsylvania State University, US

This paper outlines a new surface-potential-based compact MOSFET model (SP) developed at The Pennsylvania State University. The main objective of this work is to find practical engineering solutions of several long-standing problems of surface-potential-based modeling [...]

Standardization and Validation of Compact Models

Brooks B., Green K., Krick J., Vrotsos T., Weiser D., Texas Instruments, US

The idea of standardizing compact (SPICE-like) models has recently gained momentum in the semiconductor industry. However, since compact model equations reside in software, the concept of standardization is difficult. Several key issues must be addressed, [...]

Detailed Comparison of the SP2001, EKV, and BSIM3 Models

Bendix P., LSI Logic, US

Practical comparisons are made of three available or soon to be available compact MOS models----SP2001 (surface potential 2001), EKV, and BSIM3. They are compared both in their DC and AC quality of fits to measured [...]

Challenges of Modeling VLSI Interconnects in the DSM Era

Arora N.D., Simplex Solutions, US

As VLSI technology shrinks to deep sub-micron (DSM) geometries (below 0.18mm), the parasitic due to interconnects are becoming a limiting factor in determining circuit performance. An accurate modeling of interconnect parasitic resistance (R), capacitance (C) [...]

Compact Modeling

The New Approach to the Power Semiconductor Devices Modelling

Starzak L., Zubert M., Napieralski A., Technical University of Lodz, PL

Due to their specific structures the power devices need special models different from those developed for low power electronics. The development of such special models is far from being simple as distributed nature of phenomena [...]

Novel Computing Architecture on Arrays of Josephson Persistent Current Bits

Han J., Jonker P., Delft University of Technology, NL

A superconducting qubit (or quantum bit), which consists of a micrometer-sized loop with three Josephson junctions, has two persistent currents of opposite direction as its two states. The states of the qubit can be brought [...]

Characterization of “Multipath Interconnects” for Microelectronic and Nanotechnology Circuits

Goel A.K., Eady N.R., Michigan Technological University, US

A multipath interconnect carries a signal by using the concept of parallel processing by providing two or more paths between the driver and the load. These paths are stacked vertically isolated from one another by [...]

Compact Modeling of Tunneling Breakdown in PN Junctions for Computer-Aided ESD Design (CAD for ESD)

Subramanian Y., Darling R.B., University of Washington, US

This paper presents compact, physically-based electrothermal models for direct as well as indirect bandgap tunneling processes in pn-junctions for use in network simulators (e.g. Saber or VHDL-A). The model for indirect tunneling has been validated [...]