Sensors, MEMS, Electronics – Page 323

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]

The Level-Set Method for Modeling Epitaxial Growth

Ratsch C., Petersen M., Caflisch R.E., University of California, Los Angeles, US

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]

Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials

Pirch N., Baldus O., Waser R., Kreutz E.W., RWTH Aachen, DE

Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]

Process Modeling

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]

Molecular Control of the Drain Current in a Buried Channel MOSFET

Yang J., de la Garza L., Thornton T.J., Kozicki M., Gust D., Arizona State University, US

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain [...]

Effects of Structural Deformation and Tube Chirality on Electronic Conductance of Carbon Nanotubes

Svizhenko A., Maiti A., Anantram M.P., NASA Ames Research Center, US

A combination of large scale classical force-field (UFF), density functional theory (DFT) and tight-binding Green’s function transport calculations is used to study the electronic properties of carbon nanotubes under the twist, bending and AFM-tip deformation. [...]

Effects of Disorder in Reduced Dimensional and Quantum Electronics

Weaver B.D., Aifer E.H., Naval Research Laboratory, US

We discuss the effect of atomic disorder on electronic systems that operate in either reduced dimension or by quantum-mechanical transport. Systems include high electron mobility transistors, tunnel diodes, superconductors, multiquantum well infrared and ultraviolet detectors, [...]

Molecular Electronics: The Experimentalist’s View

Tsui R., Motorola, US

In the last few years, significant experimental advances have been achieved in the utilization of nanoscale molecular components for electronic applications. A variety of materials, including carbon nanotubes, custom-synthesized organic molecules, metallic nanoparticles, and biological [...]