Sensors, MEMS, Electronics – Page 324

Nanocrystalline Silicon Superlattices for Nanoelectronic Devices

Tsybeskov L., University of Rochester, US

This paper provides a brief introduction to a novel nanostructured system consisting of ordered layers of Si nanocrystals separated by atomically flat and chemically abrupt layers of amorphous silicon dioxide with thickness of several nanometers. [...]

Molecular Conductors: Paradigms and Possibilities

Ghosh A.W., Paulsson M., Datta S., Purdue University, US

The purpose of this talk is to present simple models (whose parameters are extracted from first-principles theory) that capture the basic physics of molecular conduction and provide intuitive explanations for a number of features in [...]

Quantum Transport in Nanotube Transistors

Leonard F., Sandia National Laboratories, US

We discuss recent calculations of electronic transport in a 10 nm long, three-terminal carbon nanotube device. By calculating self-consistently the electrostatic potential and charge in the device, we obtain the band bending along the nanotube [...]

Molecular Electronics by the Numbers

Pantelides S.T., Di Ventra M., Lang N.D., Rashkeev S.N., Vanderbilt University, US

The paper gives an overview of recent work by the authors in first-principles, parameter-free calculations of electronic transport in molecules in the context of experimental measurements of current-voltage (I-V) characteristics of several molecules by Reed [...]

Field Emission of Carbon Nanotubes and the Electronic Structure of Fullerenes Encapsulated in Carbon Nanotubes

Cho Y., Kim G., Lee S., Ihm J., Seoul National University, KR

We have performed first-principles calculations on the field emission of carbon nanotubes. The three-dimensional character of the current source, as well as the effect of the external electric field, are explicitly considered. The calculated electron-leakage [...]

Molecular and Nanoelectronics

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]