Sensors, MEMS, Electronics – Page 300

Multidimensional Model-Based Parameter Estimation Method for Compact Modeling of High-Speed Interconnects

Dhaene T., University of Antwerp, BE

A new multivariate modeling technology is developed that allows engineers to define the frequency range, layout parameters, material properties and desired accuracy for automatic generation of simulation models of general passive electrical structures. It combines [...]

An Interactive Website as a Tool for CAD of Power Circuits

Swiercz B., Starzak L., Zubert M., Napieralski A., Technical University of Lodz, PL

The rapid development of microelectronics results in more complex semiconductor device structures and makes it necessary to use modern computer software. However, high prices and hardware requirements considerably limit the access to these CAD tools [...]

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including [...]

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) [...]

A Compact Model Methodology for Device Design Uncertainty

Williams R., Watts J., Na M-H, Bernstein K., Internatoinal Business Machines Corporation, US

Todays ULSI chip and transistor technologies have a high degree of concurrency due to the complexity of new, advanced high performance features. This creates challenges for circuit designer who must account for the evolution of [...]

Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode

Nakagawa T., Sekigawa T., Tsutsumi T., Suzuki E., Koike H., Electroinformatics Group, AIST, JP

Recently, a double-gate structure has attracted much attention as an emerging device concept. The DG MOSFET is regarded as the most scalable device. Usually the DG MOSFET is supposed to be used as a three-terminal [...]

Double-Gate CMOS Evaluation for 45nm Technology Node

Chiang M-H, An J.X., Krivokapic Z., Yu B., AMD, US

Interest in the double-gate (DG) MOSFET has been growing as transistor development is approaching the end of SIA roadmap. Recent progress in DG technology, and some theoretical study have promoted DG to one of the [...]

Gate Current Partitioning in MOSFET Models for Circuit Simulation

Ngo Q., Navarro D., Mizoguchi T., Hosakawa S., Ueno H., Miura-Mattausch M., Yang C.Y., Santa Clara University, US

Gate current plays a critical role in circuits featuring sub-100nm MOSFETs. This paper elucidates the importance of gate current partitioning for accurate circuit simulation. Past publications have presented gate current models based on surface potential [...]

A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current

Gu X., Wang H., Gildenblat G., Workman G., Veeraraghavan S., Shapira S., Stiles K., Penn State University, US

The continued aggressive scaling of the gate oxide thickness makes the accurate modeling of the gate tunneling current an important aspect of the MOSFET compact model. This work presents a new compact model of which [...]

Application of Genetic Algorithm to Compact Model Parameter Extraction

Cai X., Wang H., Gu X., Gildenblat G., Bendix P., Penn State University, US

The total number of model parameters in compact MOSFET models is usually between 50 and 300, necessitating an elaborate extraction process. Gradient-based optimization techniques were found to be useful but somewhat limited in their scope. [...]