Sensors, MEMS, Electronics – Page 280

On the Correlations Between Model Process Parameters in Statistical Modeling

Slezak J., Litschmann A., Banas S., Mlcousek R., Kejhar M., ON Semiconductor, CZ

Statistical modeling in the design of todays high performance integrated circuits (ICs) is a necessity to produce competitive products with short development time. The use of backward propagation of variance (BPV) has proven its worth [...]

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Morris H.C., DePass M.M., Abebe H., San Jose State University, US

Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

Extraction of Extrinsic Series Resistance in RF CMOS

Alam M.S., Armstrong G.A., The Queen’s University of Belfast, UK

An analytical approach for parameter extraction for CMOS incorporating substrate effect has been presented. The method is based on small-signal equivalent circuit valid in all region of operation, which uniquely extract extrinsic resistances used to [...]

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poissons equation. The formulation starts with deriving a close [...]

A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

He J., Xi X.i, Chan M., Niknejad A., Hu C., University of California-Berkeley, US

A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poissons equation to solve for electron concentration directly rather than [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]