Advanced Materials & Manufacturing – Page 543

Modeling Snapback and Rise-time Effects in TLP Testing for ESD MOS Devices using BSIM3 and VBIC Models

Zhou Y., Connerney D., Carroll R., Luk T., Fairchild Semiconductor, US

A simple SPICE macro model has been created for ESD MOS modeling. The model consists of standard components only. It includes a MOS transistor modeled by BSIM3v3, a bipolar transistor modeled by VBIC, and a [...]

How To Design for Analog Yield using Monte Carlo Mismatch SPICE Models

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia Sdn Bhd, MY

The downscaling of devices causes the unpredictability of analog circuit yield. Transistor mismatch is one of the obstacles to achieving high yield. Analog circuit designers usually run Monte Carlo mismatch models to predict the functionality [...]

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]

Device Parameter Extraction from Fabricated Double-Gate MOSFETs

Tsutsumi T., Liu Y., Nakagawa T., Sekigawa T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology (AIST), JP

Accurate spice simulation needs parameter extraction of the fabricated DG-MOSFETs with good electrical characteristics. However, it is very difficult to fabricate such good DG-MOSFETs, so that device parameter extraction of the fabricated DG-MOSFETs has been [...]

Compact Model for Ultra-Short Channel Four-Terminal DG MOSFETs for Exploring Circuit Characteristics

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology (AIST), JP

We have proposed a compact model of the DG MOSFETs which handles two gates independently. The model can simulate the DG MOSFETs of asymmetric gate design, together with their four-terminal operation. In this report, we [...]

Compact Modeling of Threshold Voltage in Double-Gate MOSFET including Quantum Mechanical and Short Channel Effects

Nehari K., Munteanu D., Autran J-L, Harrison S., Tintori O., Skotnicki T., L2MP-CNRS, FR

Compact modeling of Double-Gate MOSFET incites very much interest presently, since DG is considered to be the best candidate for the integration at the end-of-roadmap. The aim of this work is to develop a short-channel [...]

A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement Effects

Nehari K., Autran J-L, Munteanu D., Bescond M., L2MP-CNRS, FR

A quantum-mechanical compact model of the threshold voltage for quantum-wire (QW) MOSFETs has been developed. This approach is based on analytical 2D solutions for the decoupled Schrödinger and Poisson equations solved in a 2D cross-section [...]

A Compact Model to Predict Quantized Sub-Band Energy Levels and Inversion Layer Centroid of MOSFET with Parabolic Potential Well Approximation

He J., Chan M., Hu C., University of California-Berkeley, US

A novel analytical model to predict the sub-band energy levels and inversion charge centroid in MOS surface inversion layer with the parabolic potential well approximation has been presented in this paper. Based on coupled solution [...]

A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET

Wang L., Meindl J.D., Georgia Institute of Technology, US

As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME [...]

SPICE Modeling of Multiple Correlated Electrical Effects of Dopant Fluctuations

Lee Y.M., Watts J., Grundon S., Cook D., Howard J., IBM Semiconductor Research and Developement Center, US

We proposed a new methodology capable of accurately modeling the partial correlations and geometric dependency in the local random fluctuations of various electrical parameters. This method incorporates principal factor analysis (PFA) into the conventional SPICE-based [...]