Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y.
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Keywords: circuit simulation, compact model, device physics, GaN HEMTs, power application, RF, SPICE
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast development of device technology and circuit integration, compact models for GaN HEMTs are of great value for circuit design and simulation. In this paper, an analytical drain current model for GaN HEMTs is developed based on the definition of surface potential. The electrostatic potential solution is provided first by solving the charge control equations. Based on the surface potential model, a close formed and SPICE friendly drain current model is developed for GaN HEMTs which captures the core physics and some additional effects in HEMT devices. Then, the model is calibrated and validated with TCAD simulations, and the experimental I-V measurements of fabricated devices.
Journal: TechConnect Briefs
Volume: TechConnect Briefs 2019
Published: June 17, 2019
Pages: 244 - 247
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Sensors - Chemical, Physical & Bio
ISBN: 978-0-9988782-8-7