Papers – Page 737 – TechConnect Briefs

Nanofabrication of Biomaterial, CNT and Organic Polymer Patterned Thinfilms using Piezoelectric Ink Jet Printing

Sumerel J.L., Deravi L.F., Wright D.W., Dimatix, Inc., US

In contrast to thermal ink jetting that uses heat to generate fluid drop ejection, MEMS-constructed piezoelectric ink jet printheads use a thin PZT slab bonded to a silicon diaphragm to generate acoustic energy that drives [...]

Electric Field Process for the Fabrication of Higher Order Structures form Biomolecule Derivatized Nanoparticles

Heller M.J., Dehlinger D., Sullivan B., Esener S., University of California San Diego, US

An electronic microarray has been used to carry out directed self-assembly of higher order 3D structures from Biotin/Streptavidin and DNA derivatized nanoparticles. Structures with up to fifty layers of alternating biotin and streptavidin and DNA [...]

Silicon Nanowire Transistors Fabricated by the Mass-Manufacturable, Self-Assembling “Grow-in-Place” Approach

Shan Y., Fonash S.J., Pennsylvania State University, US

Silicon nanowire (SiNW) transistor fabrication, until our work, has had environmental concerns and manufacturing issues arising from the use of a complex process flow involving SiNW growth and harvesting followed by nanowire positioning, aligning and [...]

Gas Phase Nanoparticle Integration

Barry C.R., Jacobs H.O., University of Minnesota, US

We report on two gas phase nanoparticle integration processes to assemble nanoparticles and other nanomaterials onto desired areas on a substrate. We expect these processes to work with any material that can be charged including [...]

Fabrication of Bowtie Nano-Gap Structures by Electron Beam Lithography

Murali R., Walters E., Zaman F., Tabor C., Huang W., El-Sayed M., Meindl J.D., Georgia Tech, US

Metallic nano-particle pairs in close proximity to one another display surface-enhanced raman scattering (SERS). Single-molecule detection has been predicted to be possible thanks to SERS. The SERS enhancement is due an induced localized electric field [...]

Dip Pen Nanolithography®: A Maturing Technology for High-Throughput Flexible Nanopatterning

Haaheim J.R., Tevaarwerk E.R., Fragala J., Shile R., NanoInk Inc, US

Precision nanoscale deposition is a fundamental requirement for much of current nanoscience research. Further, depositing a wide range of materials as nanoscale features onto diverse surfaces is a challenging requirement for nanoscale processing systems. As [...]

High resolution Nanolithography using Focused Ion Beam Scanning Electron Microscopy (FIB SEM)

Wilhelmi O., Roussel L, Stokes D.J., Hubert D.H.W., FEI Company, NL

State-of-the-art FIB technology combined with high-performance SEM is making a big impact on nanotechnology, particularly with the ability to use either focused ions or electrons to perform advanced nanolithography. Achieving the highest standards requires an [...]

Novel lithography technique using an ASML stepper/scanner for the manufacture of display devices in MEMS world

Best K., Raval P., Kappel N., Yang C., Wang M., Jeewakhan N., Prejda M., Kassekert K., Moore M., ASML USA, Inc - Special Applications, US

In the MEMS and MOEMS product world, manufacturer of display/micro-devices requires bonding of two wafers. The front side pattern of the top wafer needs to be aligned with aggressive overlay requirement with the remaining portion [...]

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

Nikoobkht B., National Institute of Standards and Technology, US

A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given [...]

InSb and GaInSb nanowires for thermoelectric applications

Ye Q.L., Scheffler R., Kumari J., Leverenz R., NASA Ames Research Center, US

One-dimensional III-V compound semiconductor nanowires are an important class of nanomaterials that possess unique structures, remarkable properties, and great potential in various applications. InSb represents the smallest band-gap III-V compound semiconductor (0.17 eV at room [...]