Papers – Page 590 – TechConnect Briefs

An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation

Tudor B., Wang J.W., Hu B.P., Liu W., Lee F., Synopsys, Inc., US

The paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various and generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOS process technologies. [...]

The Bipolar Field-Effect Transistor Theory (B. Latest Advances)

Sah C-T, Jie B.B., University of Florida, US

Latest advances are presented on theoretical device and circuit characterizations of the Bipolar Field effect transistor (BiFET) [1]. The 2 Dimensional (2 D) rectangular geometry of the transistor (uniform in the width direction) is employed [...]

The Bipolar Field-Effect Transistor Theory (A. Summary of Recent Progresses)

Jie B.B., Sah C-T, Peking University, CN

Field effect transistor (FET) was conceived 80 years ago in Lilienfeld ‘s 1926 1932 patents [1]. Shockley 1952 [2] invented the volume channel FET 55 years ago using two opposing p/n junctions as gates on [...]

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation

Zhou Y., Hajjar J.-J., Analog Devices, Inc., US

A new enhancement on modeling ‘snapback’ in MOS transistors for ESD simulation is presented. The model uses standard industry models only and intrinsically includes all major physical effects in snapback. An ESD snapback MOS model [...]

Recent Advancements on ADMS Development

Gu B., Lemaitre L., Freescale Semiconductor, US

Last a few years have witnessed a quick rise of Verilog-A language as a new standard for compact model development. Consequently there are significant interests in developing softwares which compiles compact models defined in Verilog-A [...]

Adaptable Simulator-independent HiSIM2.4 Extractor

Gneiting T., Eguchi T., Grabinski W., AdMOS GmbH Advanced Modeling Solutions, DE

This paper presents a method and its software implementation to extract Spice parameters of the HiSIM2.4 model. The completed flow of dedicated parameter extraction procedures is currently designed for the HiSIM2.4 model and can be [...]

The Driftless Electromigration Theory (Diffusion-Generation-Recombination-Trapping)

Sah C-T, Jie B.B., University of Florida, US

Electromigration (EM) is the transport of atoms and ions in metals at high electrical current density (>100kA/cm^2) leaving behind voids. It was delineated in 1961 by Huntington [1] in gold wire, and empirically modeled by [...]

Modeling of Floating-Body Devices Based on Complete Potential Description

Sadachika N., Murakami T., Ando M., Ishimura K., Ohyama K., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]