Papers – Page 1058 – TechConnect Briefs

Yield Prediction Under Non-Standard Data Distributions

Rao S., Saxena S., Apte P., Mozumder P.K., Davis J., Burch R., Vasanth K., Texas Instruments, Inc., US

The trend towards smaller feature sizes has increased the need to accurately characterize the distribution of process and device responses to predict and improve yield [1]. The usual approach to characterization assumes that the response [...]

A Floating Random-Walk Method for Efficient RC Extraction of Complex IC-Interconnect Structures

Iverson R.B., LeCoz Y.L., Random Logic Corporation, US

The floating random-walk method has been used to efficiently extract interconnect capacitance in complex, multilevel integrated circuits. We present here an overview of the floating random-walk method in the context of capacitance extraction. The method [...]

Fault Model Generation for MEMS

Kolpekwar A., Kellen C, Blanton R.D., Carnegie Mellon University, US

Most MEMS applications demand extraordinary levels of product reliability. This results in the need to design a comprehensive testing methodology for MEMS. Effectiveness of any testing methodology depends on the accuracy of fault models utilized. [...]

3-D Electrothermal Model of Multifinger, High-Power HBTs

Dhondt F., Barrette J., Rolland P.A., Delage S., IEMN, FR

We present a 3-D electrothermal model based on the finite difference method and applied to GaAs heterojunction bipolar transistors (HBTs). This non-linear model compmes the temperature distribution under static bias conditions for multifinger HBTs, although [...]

Adaptive Hierarchical Finite Element Modeling of Dopant Diffusion

Bose A., Rafferty C.S., Bell Laboratories, US

We present a finite element formulation based on a hóp refinement strategy for the coupled dopant-defect diffusion problem in semiconductor process modeling. The algorithm involves increasing the degree p of the element basis as well [...]

Modeling of Strain in Boron-Doped Silicon Cantilevers

Rueda H.A., Law M.E., University of Florida, US

A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as [...]

A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules

Tronel Y., Fichtner W., Swiss Federal Institute of Technology Zürich, CH

Insulated Gate Bipolar Transistors (IGBT's) are widely used in the automotive industry as high power current switches. They are currently being introduced into traction applications (locomotives, trams, metros, etc.) where high reliability is extremely important. [...]

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