A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Feng Z.; He J.; He P.; Song L.; Wang W.; Wu W.; Zhao W.; Zhu Y.

A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Zhu Y., Zhao W., Wang W., Wu W., Feng Z., He J., He P., He J., He P., Song L.
Peking University Shenzhen SOC Key Laboratory, CN

Keywords: 3-D numerical simulation, fin-width, FinFET, intrinsic parameter fluctuation, LER

This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.

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Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2016
Published: May 22, 2016
Pages: 67 - 71
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 978-0-9975-1173-4