Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure
Zhang A., Zhang L., Zhang X., Zhang A., Zhang L., Zhang X., Mei J., Zhang A., Zhang L., Zhang X., He H., He J., He H., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN
This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]