TCAD – TechConnect Briefs

Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics

Seebacher E., Steinmair A., austriamicrosystemsAG, AT

Accurate process variation coverage within SPICE models has become an essential demand from the design community. These variations can be simulated most efficiently with statistics based models which avoid unrealistic pessimistic corners. Sufficient measurement data [...]

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M., Hiroshima University, JP

A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]

Linearity evaluation of Silicon Nanowire Surrounding Gate MOSFET for high performance ULSI applications

Aggarwal N., Sikka K., Gupta I., Chaujar R., Delhi Technological University, IN

The inspiration of this work is that the search for high performance ICs has led to scaling of MOSFETs down to sub-50nm regime and thus Silicon Nanowire (SNW) MOSFETs offer a promising solution for realizing [...]

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

Abebe H., Cumberbatch E., USC, US

A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer [...]

A visual approach on MEMS process modeling using device cross-sections

Schmidt T., Mielke M., Hahn K., Ortloff D., Popp J., Brueck R., University of Siegen, DE

With MEMS entering fast moving consumer markets the need for more efficient design concepts becomes apparent. A technology centered approach where a product is designed around a highly specialized and optimized technology cannot cope with [...]

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Kernstock C., Karner M., Baumgartner O., Gehring A., Holzer S., Kosina H., Global TCAD Solutions, AT

An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]

Modeling of FET Flicker Noise and Impact of Technology Scaling

Chen C-Y, Liu Y., Cao S., Dutton R., Sato-Iwanaga J., Inoue A., Sorada H., Stanford University, US

Ongoing scaling of device dimensions, including the introduction of new channel materials and device structures, as well as the incorporation of novel gate-stack materials, has major implications on noise performance metrics. In particular, flicker noise [...]

TCAD-based Process Dependant HSPICE Model Parameter Extraction

Mahotin Y., Tirumala S., Lin X-W, Pramanik D., Synopsys, Inc., US

This paper describes the methodology for global extraction of HSPICE compact model parameters as explicit polynomial functions of process parameter variations (halo dosage, gate oxidation temperature etc). Electrical data required for extraction is obtained from [...]

Effects of Scaling on Modeling of Analog RF MOS Devices

Liu Y., Cao S., Oh T.Y., Wu B., Tornblad O., Dutton R.W., Stanford University, US

This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence [...]

A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD

Heinzl R., Spevak M., Schwaha P., Grasser T., Institute for Microelectronics, AT

We will resented a completely generic scientific environment suitable for thearea of TCAD. Therewith it is possible for scientists to use a completetopological and numerical environment to develop applications with minimumoverhead or great knowledge of [...]