strain – Page 3 – TechConnect Briefs

Modeling and Simulation for Epitaxial Growth with Strain

Caflisch R.E., Connell C., Luo E., Gyure M., Simms G., Vvedensky D., UCLA, US

We describe a new approach to simulation of epitaxial growth with strain. An island dynamics model with a level set numerical method is used for the growth, a lattice statics model is used for the [...]

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Matsuda K., Nakatsuji H., Kamakura Y., Naruto University of Education, JP

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method

Cavassilas N., Aniel F., Fishman G., CNRS, FR

A strain Hamiltonian Hst, associated with a sps* k.p Hamiltonian Hkp is used to descibe the valence band and the first two conduction bands of a strained indirect semiconductor. Hst takes into accoutn the Bir-Pikus [...]

Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures

Cavassilas N., Autran J-L, CNRS, FR

We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]

Load-Deflection of a Low-Stress SiN-Membrane/Si-Frame Composite Diaphragm

Correia J.H., Bartek M., Wolffenbuttel R.F., Delft University of Technology, NL

Finite-Element-Methods (FEM) has been used to study the behavior of a non-planar composite diaphragm, which is to be used in a tunable Fabry-Perot-based silicon microinterferometer. The composite (Ag-mirrorAow-stress SiN membrane/Si-frame) diaphragm used exhibits: excellent flatness, [...]

Modeling of Strain in Boron-Doped Silicon Cantilevers

Rueda H.A., Law M.E., University of Florida, US

A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as [...]

Residual Stresses/Strains Analysis of MEMS

Hsu T-R., Sun N., San Jose State University, US

This paper describes the development of a finite element based MEMPACK code developed by the lead author and his graduate students. The MEMPACK code will be used for simulation and prediction of residual stresses and [...]