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Keywords: silicon

Visible Room Temperature Photoluminescence in Wet-Chemically Etched Silicon Nanowires

Sivakov V.A., Voigt F., Brönstrup G., Bauer G., Christiansen S.H., Institute of Photonic Technology, DE
Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in wet chemically etched heavily (10E19 cm-3) and lowly (10E15 cm-3) doped silicon nanowires (SiNWs). Our observations strongly suggest that visible light emission at room [...]

Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors

Forbes L., Louie M.Y., Oregon State University, US
When the silicon is not strongly absorbing in the near infrared a back side textured surface works in conjunction with a totally internally reflecting front side surface to best increase the absorption of near infrared [...]

Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

Grimm H., Petermann N., Gupta A., Wiggers H., University of Duisburg-Essen, DE
Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane [...]

Electrical Properties of Functionalized Silicon Nanoparticles

Hartner S., Gupta A., Wiggers H., University Duisburg-Essen, DE
Phosphorous-doped as well as undoped Si-NPs with a mean particle diameter of about 50 nm were synthesized in a microwave plasma. The natural oxide was removed by etching the particles with hydrofluoric acid. In order [...]

The Competitive Cost Position of Novel Thin Film Photovoltaic Module Technologies in High Temperature and Low Light Conditions

Goodrich A., Hannibal T., Grimes J., Wendt R., IBIS Associates, Inc., US
Few Industries more strictly obey competitive costs in technology strategy decisions than does the electricity generation market. Although governments often legislate the amount of renewable energy generation companies must provide the source is left up [...]

Modeling Voids in Silicon

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]

Highly passivated silicon chips with micron aperture for the pA measurements of single ion channels

Varnier A., Plénat T., Ghenim L., Marcel-Kermarrec F., Picollet-d’Hahan N., Agache V., Sauter F., Chatelain F., Fuchs A., CEA-Grenoble, FR
Detection of single channel activities on a high throughput device is of major interest for pharmaceutical industries developing new drugs targeting ion channels. A silicon chip, with 9 silicon membranes having a micron aperture each, [...]

Proposal of Porous Chromium Film Fabrication Method for an IR Absorber

Kimura M., Hobara M., Tohoku Gakuin University, JP
Novel fabrication method of porous chromium (Cr) film for an infrared (IR) absorber is proposed, and total absorption factor above 93% at about 10 micron m of the IR wavelength, which is corresponding to the [...]

Bulk Heterojunction Organic-Inorganic Photovoltaic Cell Based on Doped Silicon Nanowires

Goncher G., Noice L., Solanki R., Portland State University, US
A bulk heterojunction organic-inorganic photovoltaic cell was fabricated by growing doped n-type silicon nanowires on an n+ silicon substrate. A p-type organic semiconductor (P3HT) was then coated over the nanowires. The device was completed by [...]

Bulk Heterojunction Organic-Inorganic Photovoltaic Cell Based on Doped Silicon Nanowires

Goncher G., Noice L., Solanki R., Portland State University, US
A bulk heterojunction organic-inorganic photovoltaic cell was fabricated by growing doped n-type silicon nanowires on an n+ silicon substrate. A p-type organic semiconductor (P3HT) was then coated over the nanowires. The device was completed by [...]

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