A bulk heterojunction organic-inorganic photovoltaic cell was fabricated by growing doped n-type silicon nanowires on an n+ silicon substrate. A p-type organic semiconductor (P3HT) was then coated over the nanowires. The device was completed by covering the active region with a glass/ITO/PEDOT-PSS transparent electrode, and soldering contacts to the n+ substrate and ITO film with an indium alloy solder. The device has good diode IV characteristics and good photocurrent (uA range for a 1 cm x 1 cm device), but low photovoltage. Work is in progress to further characterize the device response and improve the characteristics.
Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Pages: 704 - 707
Industry sector: Energy & Sustainability
Topics: Fuel cells & Hydrogen, Solar Technologies