Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric and solar applications

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Microwave-plasma induced thermal decomposition of gaseous precursors like germane (GeH4) and silane (SiH4) is used to synthesize semiconductor nanoparticles for thermoelectric and thermal applications. P and n-doping can be achieved by mixing silane and germane with diborane (B2H6) and phosphine (PH3), respectively. Adjusting the fraction of the respective precursor in the gas phase is used to control the dopant concentration.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 21, 2010
Pages: 410 - 412
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoparticle Synthesis & Applications
ISBN: 978-1-4398-3401-5