SiGe HBT – TechConnect Briefs

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Wu H.C., Mijalkovic S., Burghartz J.N., Delft University of Technology, NL

A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct [...]

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

Niu G., Auburn University, US

This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö [...]

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Simulation of the Frequency Limits of SiGe HBTs

Geßner J., Schwierz F., Mau H., Nuernbergk D., Roßberg M., Schipanski D., Technische Universitat Ilmenau, DE

The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the [...]