This paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic, as well as to very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 796 - 799
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling