RF – Page 3 – TechConnect Briefs

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Luryi & A. Pacelli S., State University of New York at Stony Brook, US

We review a recently proposed methodology for automatic generation of equivalent circuits from physical device simulation. The method is based on the calibration of a simplified equivalent-circuit model on simulation results, and can achieve an [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

Tinttunen T., Veijola T., Nieminen H., Ermolov V., Ryhanen T., Helsinki University of Technology, FI

A simulation model for static analysis of a doubly supported capacitive MEMS RF switch has been constructed using electrical equivalencies. Energy-conserving large-displacement macro models for beam deflection, gap capacitance, electrostatic force, and mechanical contact are [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Sudhama C., Joardar K., Whitfield J., Zlotnicka A., Motorola SPS, US

The exploration and modeling of high-frequency MOSFET phenomena are vitally important because MOSFETs are emerging as candidates for active devices in front-end RF circuits operating at more than 1GHz [1-2]. In this work we present [...]