Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

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A simulation model for static analysis of a doubly supported capacitive MEMS RF switch has been constructed using electrical equivalencies. Energy-conserving large-displacement macro models for beam deflection, gap capacitance, electrostatic force, and mechanical contact are utilized. A one-dimensional finite-difference approach is utilized. The model is capable of reproducing the large-displacement beam deflection profile. The static model is verified by comparing APLAC© simulation results with measured CV characteristics. The results show that the model correctly reproduces the CV characteristics, including the performance at contact.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 166 - 169
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications, Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1