quantum transport – TechConnect Briefs

Resistance measurements and weak localization in long SWNTs

Gabrielli P.G., Gabrielli S., Lisi N., ENEA, IT

In the theory of the 1-d electron systems, called Tomonaga-Luttinger-liquid (LL), the correlated electron state is characterized by a parameter g that measures the strength of the interaction between the electrons (g=1 for non-interacting electron [...]

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

Brugger S.C., Schenk A., Wirthmueller A., ETH Zürich, CH

In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended [...]

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]

ALTRAS-CNFET: Full-Band Based Quantum Transport Simulator for Carbon Nanotube Field Effect Transistor Engineering: From Chirality to Device Performance

Bian W., Chan M., He J., Liu F., Man T.Y., Tao Y., Shenzhen Graduate School, Peking University, CN

ALTRAS-CNTS is a powerful full-band based quantum transport simulator for CNT energy-band and CNFET performance calculation. It can directly compute device tunneling gate current in the radial direction, drain current in the channel and other [...]

Crystalline Magnetotunnel Junctions: Fe-MgO-Fe, Fe-FeOMgO-Fe and Fe-AuMgOAu-Fe

Flensberg K., Stilling M., Stokbro K., Copenhagen University, DK

The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have [...]

Modeling of Nanoelectronic and Quantum Devices

Akis R., Ferry D.K., Gilbert M.J., Speyer G., Arizona State University, US

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have [...]

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

Kosina H., Nedjalkov M., Selberherr S., Institute for Microelectronics, TU Vienna, AT

A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Ferry D.K., Shifren L., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Bertoni A., Bordone P., Giacobbi N., Jacoboni C., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]