Monte Carlo – Page 3 – TechConnect Briefs

Quantitative Detection by Single Ion Channel Event Statistics: an Algorithmic Approach

Lodesani F., Bennati M., Fiegna C., Tartagni M., ARCES, IT

The capability of having ligand-gated ion channels embedded in planar biomimetic membranes, together with a proper electronic system for elaborating the signal will give the possibility of creating high-performances sensors, able to detect low concentrations [...]

A Multiscale investigation of the influence of surface morphology on thin films CVD deposition

Barbato A., Rondanini M., Cavallotti C., Politecnico di Milano, IT

Growth rates and morphology of thin solid films deposited through Chemical Vapor Deposition processes are strongly dependent on chemical-physical events that occur at time and length scales differing by several orders of magnitudes. Models adopted [...]

Monte Carlo Algorithm for Nanoscale Electro-Thermal Optimization

Skorek A.W., Ble S.V., Anders G., Nazarko J., University of Quebec at Trois-Rivieres, CA

In this paper, we will present a Monte Carlo method based algorithm established for a sample nanoelectronics device. We are assuming that at the nanoscale level like at the highest the thermal phenomena are important [...]

Mobility of Electrons in Rectangular Si Nanowires

Ramayya E., Vasileska D., Goodnick S.M., Knezevic I., Arizona State University, US

We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field [...]

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

Brugger S.C., Schenk A., Swiss Federal Institut of Technology, CH

A new one-particle Monte Carlo iteration scheme has been found toself-consistently take into account generation-recombinationprocesses. The basic idea is to couple the BTE not only with thePoisson equation, but also with the continuity equation by [...]

Structural Optimization of Nanoclusters with Adaptive Tempering Monte Carlo Method

Dong X., Blaisten-Barojas E., George Mason University, US

The Adaptive Tempering Monte Carlo (ATMC) method was proposed for the optimization of nanosystems. In the simulation, tempering is applied such that the temperature of the system is changed adaptively such that a multitude of [...]

A Grand Canonical Monte-Carlo Simulation of the Textural, Mechanical and Adsorption Properties of Faujasite zeolite Carbon Replica

Roussel T., Bichara C., Pellenq R.J.-M., Centre de Recherche en Matière Condensée et Nanosciences, CNRS, FR

The development of the negative templating process to obtain a carbon replica from an ordered inorganic template has lead to the synthesis of new carbon materials which have interesting textural properties attractive for energy storage. [...]

How To Design for Analog Yield using Monte Carlo Mismatch SPICE Models

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia Sdn Bhd, MY

The downscaling of devices causes the unpredictability of analog circuit yield. Transistor mismatch is one of the obstacles to achieving high yield. Analog circuit designers usually run Monte Carlo mismatch models to predict the functionality [...]

Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation

Zhao X., Nabet B., Drexel University, US

We simulate the process of energy relaxation in two-dimensional-electron-gas (2DEG) via electron-electron (e-e) scattering by Monte Carlo method. Results indicate a sub-picosecond energy relaxation response time to external perturbation. We suggest that carriers are subjected [...]

Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures

Zorman B., Krishnan S., Vasileska D., Xu J., Van Schilfgaarde M., Arizona State University, US

The continued scaling of semiconductor devices creates numerous challenges which have to be overcome in order to achieve device behavior that satisfies speed and power constraints. Possible alternatives to conventional CMOS devices include strained-Si or [...]