diffusion – Page 3 – TechConnect Briefs

System Simulations of Complex Electrokinetic Passive Micromixers

Wang Y., Lin Q., Mukherjee T., Carnegie Mellon University, US

This paper presents a composable system simulation framework using an analog hardware description language implementing behavioral models for electrokinetic micromixers that are capable of accurately capturing the effects of mixer topology/geometry, flow ratio and material [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]

Multiscale modeling in Nanotechnology

Maiti A., Accelrys Inc., US

Technologically important nanomaterials come in all shapes and sizes. They can range from small molecules to complex composites and mixtures. Depending upon the spatial dimensions of the system and properties under investigation, computer modeling of [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]

Numerical Modeling of Diffusion in Extracellular Space of Biological Cell Clusters and Tumors

Berthier J., Rivera F., Caillat P., CEA-LETI, FR

Biological cluster of cells may be seen as porous media, where the cells are the “solid grains” and the extracellular space (ECS) the “pores”. It is often the case in dense clusters of cells that [...]

A Fully Coulpled Computational Model of the Silylation Process

Winters W.S., Evans G.H., Prantil V.C., Larson R.S., Sandia National Laboratories, US

This paper describes a fully coupled computational model of the positive tone silylation process. The model is two-dimensional and transient and focuses on the part of the lithography process in which crosslinked and uncrosslinked resist [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]