device simulation – Page 3 – TechConnect Briefs

Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors

Saraniti M., Goodnick S.M., Wigger S.J., Arizona State University, US

We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled [...]

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

Harris J., Vasileska D., Arizona State University, US

Many factors are responsible for the continued shift in industry prototyping preference from device fabrication to device simulation. One of the incentives for this transition is the generality and flexibility gained by avoiding a physical [...]

A FEM Based Network Approach for the Simulation of Miniaturized Electromagnetic Devices

Gollee R., Gerlach G., Dresden University of Technology, DE

The paper proposes a new computational approach for analyzing miniaturized electromagnetic devices. This approach is based on a general structure of an equivalent network for the coupled electromagnetic problem. It enables automated derivation of the [...]

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Ciampolini L., Ciappa M., Malberti P., Fichtner W., Swiss Federal Institute of Technology, CH

Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant [...]

Implementation of Strain Induced Effects in Sensor Device Simulation

Matsuda K., Kanda Y., Naruto University of Education, JP

Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into [...]

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US

The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]

Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y., Chartered Semiconductor Manufacturing Ltd., SG

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical [...]

A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation

Kaiblinger-Grujin G., Selberherr S., Vienna Technical University, AT

We present analytical electron mobility formulae for Si which treat the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte Carlo (MC) [...]