Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors

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We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled with a 2D and 3D multi-grid Poisson solver.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 457 - 460
Industry sector: Sensors, MEMS, Electronics
Topicss: Modeling & Simulation of Microsystems, Nanoelectronics
ISBN: 0-9666135-7-0