device simulation – Page 2 – TechConnect Briefs

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Luryi & A. Pacelli S., State University of New York at Stony Brook, US

We review a recently proposed methodology for automatic generation of equivalent circuits from physical device simulation. The method is based on the calibration of a simplified equivalent-circuit model on simulation results, and can achieve an [...]

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Pacelli A., Palestri P., Mastrapasqua M., State University of New York-Stony Brook, US

We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and [...]

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Felsl H.P., Wachutka G., Münich University of Technology, DE

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Neinhus B., Jungemann C., Meinerzhagen B., Universitat Bremen, DE

An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Gritsch M., Kosina H., Grasser T., Selberherr S., Linton T., Singh S., Yu S., Giles M.D., TU Vienna, AT

An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Keywords: device simulation

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation

Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing

Towards Predictive TCAD and Fab Integration