Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing

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A theoretical analysis of the Monte Carlo (MC) method for the solution of the stationary boundary value problem defined by the Boltzmann equation is briefly outlined. This analysis clearly shows how event biasing can be used withing the well-known One-Particle MC method. To enhance statistics in sparsely populated regions of interest, artificial carier heating is introduced by increasing the probability for phonon emission. The distribution of the scattering angle is biased to induce artificial carrier diffusion. Having identified the random variable whose realizations are statistically independent new variance estimates are proposed.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 11 - 14
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4